Chromium/titanium oxide semiconductor gas sensor and method for production thereof
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsHarald Bottner, Jurgen Wollenstein, Gerd Kuhner
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Abstract
A metal oxide semiconductor gas sensor and a method for production thereof. The sensor comprises a sensor-active metal oxide thin layer applied to a substrate, in contact with at least one electrode. The sensor-active metal oxide thin layer comprises a chromium/titanium oxide (CTO) layer with a thickness of about 10 nm to about 1 μm. The chromium and titantium layers are applied over each other using thin layer technology and are subsequently tempered.
Claims12
A metal oxide semiconductor gas sensor comprising a sensor-active thin metal oxide layer that is applied to a substrate, and that is in contact with at least one electrode wherein the sensor-active thin metal oxide layer is a chromium/titanium oxide (CTO) layer with a layer thickness of 100 nm to 500 nm, whereby the mixed oxide is present in the form of a single phase material having a corundum structure.
Dependencies are inferred from the claim text.