Light-emitting semiconductor device having an overvoltage protector

A light-emitting semiconductor device protected against electrical breakdown due to overvoltages, comprising:

• (a) a light-generating semiconductor region comprising a first and a second semiconductor layer of opposite conductivity types for generating light, the light-generating semiconductor region having a first major surface and a second major surface, opposite to the first major surface;
• (b) a first electrode disposed on the first major surface and electrically connected to the first semiconductor layer of the light-generating semiconductor region;
• (c) an electric conductor layer disposed on the second major surface and connected both electrically and mechanically to the second semiconductor layer of the light-generating semiconductor region;
• (d) a second electrode electrically connected to the conductor layer;
• and
• (e) an overvoltage protector connected both electrically and mechanically to the conductor layer for protecting the light-generating semiconductor region from overvoltage wherein the overvoltage protector is in the form of a semiconductor baseplate bonded to the second major surface of the light-generating semiconductor region via the conductor layer, wherein the conductor layer and the semiconductor baseplate are transparent to the light generated by the light-generating semiconductor region,
• wherein the first electrode on the first major surface of the light-generating semiconductor region is made from reflective material for reflecting the light for emission through the semiconductor baseplate.