Method for fabricating a semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorsJeong Yel Jang, Kang Hyun Lee
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Abstract
Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coating on an entire surface of a substrate in succession, forming a photoresist film pattern on a predetermined portion of the bottom anti-refection coating, etching the bottom anti-refection coating by using the photoresist film pattern to deposit by-product of the etching on sidewalls of the photoresist pattern to form spacers, and etching the polysilicon by using the photoresist film pattern and the spacers, to form a line.
Claims8
A method for fabricating a semiconductor device comprising:
- sequentially depositing a polysilicon and a bottom anti-refection coating on an entire surface of a substrate;
- forming a photoresist film pattern on a predetermined portion of the bottom anti-refection coating;
- etching the bottom anti-refection coating by using the photoresist film pattern, to deposit by-product of the etching on sidewalls of the photoresist pattern, but not on a surface of the polysilicon, to form spacers;
- and
- etching the polysilicon using the photoresist film pattern and the spacers as a mask to form a line.
Dependencies are inferred from the claim text.