Method of making semiconductor device
AssigneeTokyo Electron Limited
InventorsShinichi Kozuka, Naoto Umehara
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Abstract
A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.
Claims6
A method of making a semiconductor device comprising subjecting a substrate having a high-dielectric-constant gate insulating film and a hard mask comprising silicon nitride formed thereon to etching processing using a plasma of a processing gas, wherein said processing gas contains a noble gas and a reducing gas, and wherein said reducing gas comprises at least hydrogen gas.
Dependencies are inferred from the claim text.