Method for testing contact open in semicoductor device

A method for testing a contact open in a semiconductor device, comprising the steps of:

• performing a photolithography process for forming a contact;
• forming a contact hole by performing a contact etching process after sampling at least one wafer;
• performing the test for testing a contact open by sampling at least one wafer;
• depositing a conductive layer on the wafer provided with the contact hole;
• isolating the conductive layer within the contact hole by using one of a chemical mechanical process and an etch back process in order to test the contact open;
• performing a test for testing a contact open interface to check whether a remaining layer exists in an interface between the conductive layer and a lower structure of the conductive layer;
• performing a process for etching the contact of a main lot based on a test result;
• forming the conductive layer in the etched contact region;
• performing the isolation process, a test process of an electrical property and a test process of the contact open.