Thin film resistor and dummy fill structure and method to improve stability and reduce self-heating

A method of making an integrated circuit thin film resistor structure, the method comprising:

• forming a first dummy fill layer on a planar surface of a first dielectric layer;
• forming a second dielectric layer on the first dummy fill layer, and chemically mechanically polishing the surface of the second dielectric layer,
• forming a third dielectric layer over the first dummy fill layer, the third dielectric layer being disposed on the chemically mechanically polished surface and having a major planar surface, wherein the planar surface of the third dielectric layer is a non-abraded surface;
• forming a thin film resistor on the non-abraded surface of the third dielectric layer;
• forming a first inter-level dielectric layer on the thin film resistor;
• and
• forming a first metal layer on the first inter-level dielectric layer, a first portion of the first metal layer electrically contacting a portion of the thin film resistor through a contact opening in the first inter-level dielectric layer.

An integrated circuit thin film resistor structure made by the process comprising:

• forming a first dummy fill layer on a planar surface of a first dielectric layer;
• forming a planar dielectric layer over the first dummy fill layer, the planar dielectric having a non-abraded, major surface;
• forming a thin film resistor on the non-abraded, major surface of the planar dielectric layer;
• forming a first inter-level dielectric layer on the thin film resistor;
• and
• forming a first metal layer on the first inter-level dielectric layer, a first portion of the first metal layer electrically contacting a portion of the thin film resistor through a contact opening in the first inter-level dielectric layer.