Semiconductor device
AssigneeNEC Electronics Corporation
InventorKouji Tanaka
Life of this patent
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Abstract
In a semiconductor device, a plurality of first diffusion regions of a first conductive type are formed on a diffusion layer well of the first conductive type. A plurality of second diffusion regions of a second conductive type are formed on the diffusion layer well of the first conductive type. An impurity concentration of each of the plurality of first and second diffusion regions is desirably higher than that of the diffusion layer well. The plurality of first diffusion regions are connected to a first common node as an anode and the plurality of second diffusion regions are connected to a second common node as a cathode.
Claims17
A semiconductor device comprising:
- a plurality of first diffusion regions of a first conductive type formed on a diffusion layer well of the first conductive type;
- a plurality of second diffusion regions of a second conductive type formed on said diffusion layer well of the first conductive type;
- and
- a third diffusion layer of the first conductive type formed on said diffusion layer well in a ring surrounding and separated by an annular insulation region from said plurality of first diffusion regions and said plurality of second diffusion regions.
A semiconductor device comprising:
- a plurality of first diffusion regions of a first conductive type formed on a diffusion layer well of the first conductive type;
- a plurality of second diffusion regions of a second conductive type formed on said diffusion layer well of the first conductive type, each of said plurality of second diffusion regions being separated from each of said plurality of first diffusion regions;
- and
- an insulation region completely and separately surrounding each of said plurality of first diffusion regions and completely and separately surrounding each of said plurality of second diffusion regions.
A protection device comprising:
- a semiconductor region of a first conductive type;
- a first region of said first conductive type formed on said semiconductor region surrounding an area on said semiconductor region;
- a plurality of second regions of said first conductive type formed in said area on said semiconductor region;
- and
- a plurality of third regions of a second conductive type formed in said area on said semiconductor region,
- wherein said first region is separated from each of said second and third regions by an insulation region and said second regions are separated from said third regions by said insulation region.
A protection device comprising:
- a well of a first conductivity type in a semiconductor substrate;
- an annular region in said well, said annular region being the first conductivity type with a higher impurity concentration than said well;
- and
- plural first diffusion regions of the first conductivity type and plural second diffusion regions of a second conductivity type different than the first conductivity type within an area surrounded by said annular region, said plural first and second diffusion regions alternating in a matrix and being separated from each other and from said annular region by an insulator, wherein said plural first and second diffusion regions have a higher impurity concentration than said well.
Dependencies are inferred from the claim text.