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US 7,402,865 B2Granted
Semiconductor device including a contact connected to the body and method of manufacturing the same
AssigneeRenesas Technology Corp.
InventorsTakashi Ipposhi, Toshiaki Iwamatsu, Shigeto Maegawa
Life of this patent
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Abstract
A Schottky junction is formed at the connection between an SOI layer and a contact (namely, under an element isolation insulating film) without forming a P+ region with a high impurity concentration thereat. The surface of a body contact is provide with a barrier metal. A silicide is formed between the body contact and the SOI layer as a result of the reaction of the barrier metal and the SOI layer.
Claims10
A semiconductor device, comprising:
- a semiconductor layer provided on an insulation layer;
- a semiconductor element formed in said semiconductor layer;
- and
- a body contact connected to said semiconductor layer to be connected to a body region of said semiconductor element, the connection between said body contact and said semiconductor layer being made by a Schottky junction,
- wherein a silicide is formed at a connection between said body contact and said semiconductor layer, and
- said Schottky junction is formed between said silicide and said semiconductor layer.
3 more elements
A semiconductor device, comprising:
- a semiconductor layer provided on an insulation layer;
- a semiconductor element formed in said semiconductor layer;
- and
- a body contact connected to said semiconductor layer to be connected to a body region of said semiconductor element,
- wherein a silicide is formed at a connection between said body contact and said semiconductor layer, said silicide reaching a depth of said insulation layer.
2 more elements
Dependencies are inferred from the claim text.