Light emitting devices with self aligned ohmic contacts
AssigneeCree, Inc.
InventorsDavid Beardsley Slater, Jr., John Edmond, Ian Hamilton
Life of this patent
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Abstract
Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the substrate. An ohmic contact is provided on an exposed portion of the p-type epitaxial layer. The ohmic contact is self aligned to a sidewall of the mesa and to the p-type epitaxial layer such that a sidewall of the ohmic contact is substantially aligned with a sidewall of the mesa and to the p-type epitaxial layer.
Claims11
A light emitting device, comprising:
- a substrate;
- an n-type epitaxial region on the substrate;
- a p-type epitaxial region on the n-type epitaxial region, at least a portion of the p-type epitaxial region comprising a mesa with respect to the substrate, wherein the mesa has opposing sidewalls extending completely through the p-type epitaxial region, and wherein portions of the p-type epitaxial region adjacent the opposing sidewalls of the mesa have an increased resistance relative to other portions thereof;
- an ohmic contact on an exposed portion of the p-type epitaxial region, wherein opposing sidewalls of the ohmic contact are substantially aligned with the opposing sidewalls of the mesa and to the p-type epitaxial region.
Dependencies are inferred from the claim text.