Methods of forming trench isolation regions

A method of forming a trench isolation region comprising:

• forming a masking material over a semiconductor substrate;
• the masking material comprising titanium nitride;
• forming an opening through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate;
• forming trench isolation material within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench, the trench isolation material comprising a silicon nitride-comprising layer having at least one material other than silicon nitride formed thereover;
• polishing the trench isolation material at least to an outermost surface of the titanium nitride of the masking material;
• and
• etching the titanium nitride of the masking material from the substrate substantially selectively to the silicon nitride-comprising layer.

A method of forming a trench isolation region comprising:

• forming a masking material over a semiconductor substrate;
• the masking material comprising amorphous carbon comprising at least one of boron and nitrogen;
• forming an opening through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate;
• forming trench isolation material within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench, the trench isolation material comprising a silicon nitride-comprising layer having at least one material other than silicon nitride formed thereover;
• polishing the trench isolation material at least to an outermost surface of the amorphous carbon of the masking material;
• and
• etching the amorphous carbon of the masking material from the substrate substantially selectively to the silicon nitride-comprising layer.

A method of forming a trench isolation region comprising:

• forming a masking material over a semiconductor substrate;
• the masking material comprising amorphous carbon which is transparent to visible light;
• forming an opening through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate;
• forming trench isolation material within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench, the trench isolation material comprising a silicon nitride-comprising layer having at least one material other than silicon nitride formed thereover;
• polishing the trench isolation material at least to an outermost surface of the amorphous carbon of the masking material;
• and
• etching the amorphous carbon of the masking material from the substrate substantially selectively to the silicon nitride-comprising layer.

A method of forming a trench isolation region comprising:

• forming a masking material over a semiconductor substrate;
• the masking material comprising at least two of tungsten, titanium nitride and amorphous carbon;
• forming an opening through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate;
• forming trench isolation material within the isolation trench and over the masking material outside of the trench effective to overfill the isolation trench, the trench isolation material comprising a silicon nitride-comprising layer having at least one material other than silicon nitride formed thereover;
• polishing the trench isolation material at least to an outermost surface of the masking material;
• and
• etching said at least two of tungsten, titanium nitride and amorphous carbon of the masking material from the substrate substantially selectively to the silicon nitride-comprising layer.