Method of synthesizing a compound of the formula Mn+1AXn, film of the compound and its use

A method of synthesizing or growing a compound having the general formula Mn+1AXn where M is at least one transition metal, n is 1, 2, 3 or higher, A is at least one A-group element and X is carbon, nitrogen or both, the method comprising:

• producing a seed layer on a substrate by vaporizing components for producing the seed layer from at least one solid source by physical vapor deposition, the seed layer comprising at least one material exhibiting an epitaxial relationship or a preferred crystallographic orientation to the Mn+1AXn compound to be synthesized or grown and comprising a transition metal carbide or nitride or carbonitride or oriented graphite or C60;
• and
• exposing the substrate to components vaporized from at least one solid source whereby said components, or said components in combination with at least one gaseous component, react with each other to produce the Mn+1AXn compound on the seed layer.