Water-soluble negative photoresist polymer and composition containing the same
AssigneeHynix Semiconductor Inc.
InventorGeun Su Lee
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Abstract
Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.
Claims32
A photoresist composition comprising a basic compound, water, and a photoacid generator, and a polymer having a repeating unit represented by Formula (IV):
- wherein R1 and R2 are individually selected from the group consisting of hydrogen, C1-C10 alkyl, and CF3;
- the relative ratio of a:b is 1 to 99 mol. %:1 to 99 mol. %;
- and, m is an integer ranging from 1 to 10.
A photoresist composition comprising a basic compound, water, a photoacid generator, and a polymer having a repeating unit represented by Formula (V):
- wherein R7, R8, R9 and R10 are individually selected from the group consisting of hydrogen, C1-C10 alkyl, and CF3;
- the relative ratio of e:f:g is 0.5 to 99.9 mol. % 0 to 50 mol. % 0.1 to 30 mol. %;
- and,
- n is an integer ranging from 1 to 10.
Dependencies are inferred from the claim text.