Metal wiring for semiconductor device and method for forming the same

A method for forming a metal wiring for a semiconductor device, comprising:

• sequentially forming a first interlayer insulating film and a second interlayer insulating film on a first insulating layer;
• forming a first photosensitive film on the second interlayer insulating film;
• patterning the first photosensitive film so that via hole portions of the first photosensitive film are removed;
• etching the second interlayer insulating film using the first photosensitive film as a mask;
• removing the first photosensitive film by ash treatment;
• forming a second photosensitive film on the second interlayer insulating film;
• patterning the second photosensitive film so that trench portions of the second photosensitive film are removed;
• etching the second and first interlayer insulating films using the second photosensitive film as a mask;
• removing the second photosensitive film by ash treatment;
• sequentially forming a barrier metal layer, a copper seed layer, and a copper layer on overall surfaces of the first and second interlayer insulating films having via holes and trenches;
• removing the barrier metal layer, the copper seed layer, and the copper layer from an upper surface of the second interlayer insulating film;
• forming a capping layer made of a negatively charged insulating material on the overall surface of the first insulating layer including the second interlayer insulating film;
• and
• forming a second insulating layer on the capping layer.

A method for forming a metal wiring for a semiconductor device, comprising:

• forming an interlayer insulating film on a first insulating layer;
• forming a photosensitive film on the interlayer insulating film;
• patterning the photosensitive film so that trench portions of the photosensitive film are removed;
• etching the interlayer insulating film using the photosensitive film as a mask to form trenches;
• removing the photosensitive film by ash treatment;
• sequentially forming a barrier metal layer, a copper seed layer, and a copper layer on overall surfaces of the interlayer insulating film having the trenches;
• removing the barrier metal layer, the copper seed layer, and the copper layer from an upper surface of the interlayer insulating film;
• forming a capping layer made of a negatively charged insulating material on the overall surface of the first insulating layer including the interlayer insulating film;
• and
• forming a second insulating layer on the capping layer.