High resistance silicon wafer and its manufacturing method

A high-resistance silicon wafer having resistivity of 100 Ωcm or more, wherein a density of a grown-in defect detected by seco etching is 1×103/cm−3 or less, an oxygen precipitate having a size of 0.2 μm or more is formed so as to have density of 1×104/cm2 or more in the wafer, an oxygen concentration in the wafer as measured in accordance with ASTM F-121, 1979 is 12×1017 atoms/cm3 or less, and a carbon concentration in the wafer is in a range of 0.5×1016 atoms/cm3 to 1.0×1017 atoms/cm3.

A method of manufacturing a high-resistance silicon wafer, comprising:

• providing a primary silicon wafer in which resistivity is 100 Ωcm or more, oxygen concentration as measured in accordance with ASTM F-121, 1979 is 12×1017 atoms/cm3 or more, and a carbon concentration in a range of 0.5×1016 atoms/cm3 to 1.0×1017 atoms/cm3 is used, and
• producing the high-resistance silicon wafer in which a remaining oxygen concentration in the wafer is controlled to be 12×1017 atoms/cm3 as measured in accordance with ASTM F-121, 1979 or less by performing a heat treatment for forming an oxygen precipitate nucleus and a heat treatment for growing the oxygen precipitate on the primary silicon wafer.

A method of manufacturing a high-resistance silicon wafer, comprising:

• providing a primary silicon wafer in which resistivity is 100 Ωcm or more, an oxygen concentration as measured in accordance with ASTM F-121, 1979 is 14×1017 atoms/cm3 or more, a carbon concentration in the wafer is controlled to be in a range of 0.5×1016 atoms/cm3 to 1.0×1017 atoms/cm3, and a density of a grown-in defect detected by seco etching is 1×103/cm−3 is used, a remaining oxygen concentration in the wafer as measured in accordance with ASTM F-121, 1979 is controlled to be 12×1017 atoms/cm3 or less by performing a heat treatment for forming an oxygen precipitate nucleus and a heat treatment for growing the oxygen precipitate on the primary silicon wafer.