Laser fuse with efficient heat dissipation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHao-Yi Tsai, Chao-Hsiang Yang, Shang-Yun Hou, Chia-Lun Tsai, Shin-Puu Jeng
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Abstract
A semiconductor structure having an efficient thermal path and a method for forming the same are provided. The semiconductor structure includes a protection ring over a semiconductor substrate and substantially encloses a laser fuse structure. The laser fuse structure includes a laser fuse and a connection structure connecting the fuse to integrated circuits. The protection ring is thermally coupled to the semiconductor substrate by contacts. The semiconductor structure further includes a metal plate conducting heat generated by a laser beam to the protection ring.
Claims14
A semiconductor structure comprising:
- a semiconductor substrate;
- a laser fuse connected to a connection structure over the semiconductor substrate;
- a protection ring over the semiconductor substrate and substantially enclosing the laser fuse and the connection structure;
- a conductive plate underlying and physically disconnected from the laser fuse, the conductive plate being physically connected to the protection ring, wherein the conductive plate comprises a first end physically connected to the protection ring, and a second end physically disconnected from the protection ring;
- and
- at least one electrical contact thermally coupling the protection ring and the semiconductor substrate.
An integrated circuit structure formed in a semiconductor chip, the integrated circuit structure comprising:
- a protection ring connected to a semiconductor substrate, wherein the protection ring comprises:
- a plurality of metal lines in respective metal layers and surrounding a fuse region of the semiconductor chip, wherein the plurality of metal lines each forms a ring;
- a plurality of vias connecting each metal line with a superjacent or subjacent metal line;
- and
- a plurality of dielectric layers respectively isolating each metal layer from each subjacent or superjacent metal layer;
- a plurality of contacts physically connecting the protection ring to the semiconductor substrate, wherein the protection ring comprises a first region and a second region, and wherein the first region is connected to the substrate by a plurality of contacts, and wherein the second region is not connected to the substrate by contacts;
- and
- a metal plate underlying a top metallization layer of the metal layers, wherein the metal plate is electrically connected to the protection ring.
A semiconductor structure comprising:
- a semiconductor substrate;
- a fuse structure comprising a laser fuse and a connection structure over the semiconductor substrate, the fuse being on a top metallization layer;
- a protection ring over the semiconductor substrate and substantially enclosing the fuse structure;
- a metal plate in a metal layer immediately underlying the top metallization layer, the metal plate having a lengthwise direction and a width wise direction, wherein the metal plate is physically connected to the protection ring only in the lengthwise direction;
- and
- a plurality of contacts connecting the protection ring and the semiconductor substrate.
Dependencies are inferred from the claim text.