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US 7,397,105 B2Granted
Apparatus to passivate inductively or capacitively coupled surface currents under capacitor structures
AssigneeLSI Corporation
InventorsSean Christopher Erickson, Jason Dee Hudson
Life of this patent
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Abstract
A deep n-well is formed beneath the area of a capacitor structure. The use of a deep n-well lessens the parasitic capacitance by placing a diode in series with the interlayer dielectric cap. The deep n-well also reduces substrate noise. Once the n-well is implanted and annealed, a cross hatch of shallow trench isolation is patterned over the n-well. The shallow trench isolation reduces and confines the inductively and/or capacitively coupled surface currents to small areas that are then isolated from the rest of the chip.
Claims10
An apparatus, comprising:
- a substrate;
- a deep n-well implanted in the substrate in an area of a capacitor structure;
- a shallow trench isolation in the deep n-well, wherein the shallow trench isolation includes a crosshatch of insulator material;
- a capacitor structure positioned over the shallow trench isolation;
- and
- wherein the crosshatch of insulator material extends around the deep n-well, such that no deep n-well contact exists with remaining surface of the substrate.
3 more elements
Dependencies are inferred from the claim text.