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US 7,397,085 B2Granted
Thermal coupling of matched SOI device bodies
AssigneeTexas Instruments Incorporated
InventorAndrew Marshall
Life of this patent
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Abstract
Performance matching devices in SOI are improved by thermally isolating matched devices within a continuous body of active material. Matched devices are isolated by an insulating wall of silicon dioxide (which surrounds the devices) and the oxide layer beneath, and are arranged to minimize effects from external thermal sources.
Claims9
An integrated circuit semiconductor-on-insulator structure, comprising:
- a pair of matched transistors, in a circuit stage which requires matched behavior of said pair;
- and
- a physical connection of semiconductor material which provides thermal conduction between respective bodies of said pair of transistors, but does not carry current during normal operation of said circuit stage;
- and
- an insulating material which totally surrounds at least a part of said circuit stage.
2 more elements
An integrated circuit semiconductor-on-insulator circuit structure, comprising:
- a pair of transistors in an analog circuit stage which requires matched behavior of said pair;
- a physical connection of metallic material which provides thermal conduction between respective bodies of said pair of transistors;
- and
- an insulating layer beneath said pair;
- an insulating barrier substantially surrounding said pair and extending to said insulating layer.
2 more elements
Dependencies are inferred from the claim text.