Heterojunction bipolar transistor with improved current gain
AssigneeSumika Electronic Materials, Inc.
InventorsKenneth Lee Campman, Brian Anthony Novak
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Abstract
One aspect of the present invention is directed to a heterojunction bipolar transistor (HBT) comprising: a substrate; a buffer layer of undoped semiconductor material; a sub-collector layer; a collector layer; a base layer; an emitter layer; a emitter cap layer; and a contact layer; wherein a planar doping sheet is included between the substrate layer and the collector layer; and a collector electrode in electrical connection to said collector layer; a base electrode in electrical connection with said base layer; and an emitter electrode provided in electrical connection to said emitter layer.
Claims3
A heterojunction bipolar transistor (HBT) comprising:
- a substrate layer;
- a buffer layer of undoped semiconductor material;
- a sub-collector layer;
- a collector layer;
- a base layer;
- an emitter layer;
- a emitter cap layer;
- a contact layer;
- wherein a planar doping sheet is included within the interface between the buffer layer and the sub-collector layer, and
- a collector electrode in an electrical connection to said collector layer;
- a base electrode in electrical connection with said base layer;
- and
- an emitter electrode provided in electrical connection to said emitter layer.
Dependencies are inferred from the claim text.