Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Kwan Kang, Jong-Wook Lee, Yong-Hoon Son, Yu-Gyun Shin, Jun-Ho Lee
Life of this patent
Estimating the term…
Abstract
In a semiconductor device and a method of manufacturing the semiconductor device, a plug and a channel structure are formed. The plug fills an opening and the channel structure extends upwardly from the plug. The channel structure has a substantially vertical sidewall. The opening is formed through an insulation structure located on a substrate. The plug and the channel structure comprise a material in a single crystalline state that is changed from an amorphous state by an irradiation of a laser beam. The channel structure is doped with impurities such as boron, phosphorus or arsenic.
Claims15
A method of manufacturing a semiconductor device, the method comprising:
- forming a preliminary insulation structure having an opening that partially exposes a substrate, the preliminary insulation structure including at least two patterns of materials that have etching selectivities with respect to one another;
- forming an amorphous material structure on the substrate that fills the opening, wherein forming the amorphous material structure comprises:
- forming a preliminary amorphous material structure on the substrate and the preliminary insulation structure to fill the opening;
- performing a planarizing process on the preliminary amorphous material structure until the preliminary insulation structure is exposed to form the amorphous material structure confined in the opening;
- transforming the amorphous material structure into a single crystalline material structure by irradiating a laser beam onto the amorphous material structure;
- and
- exposing an upper portion of the single crystalline material structure by removing an uppermost pattern of the preliminary insulation structure to provide an insulation structure, the upper portion of the single crystalline material structure being a channel structure having a substantially vertical sidewall.
Dependencies are inferred from the claim text.