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US 7,396,750 B2Granted
Method and structure for contacting two adjacent GMR memory bit
AssigneeNorthern Lights Semiconductor Corp.
InventorsVicki Wilson, Guoqing Zhan, Ray Buske, James Chyi Lai
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Abstract
A method and a structure are provided for improving the contact of two adjacent GMR memory bits. Two adjacent bit ends are connected by utilizing a single via.
Claims15
A method for contacting two adjacent GMR memory bits, comprising:
- forming a GMR stack layer on a first dielectric layer, which is on a substrate;
- patterning the GMR stack layer to form at least two GMR memory bits;
- forming a second dielectric layer on the at least two GMR memory bits and the first dielectric layer;
- patterning the second dielectric layer to electrically connect the two adjacent ends of the at least two GMR memory bits to form a via to expose two adjacent ends of the GMR memory bits;
- and
- forming a metal plug in the via and on the second dielectric layer.
3 more elements
A connection for two adjacent GMR memory bits, comprising:
- a first dielectric layer on a substrate;
- at least two GMR memory bits on the first dielectric layer;
- a second dielectric layer on the first dielectric layer covering the at least two GMR memory bits, wherein the second dielectric layer has a via therein to expose two adjacent ends of the at least two GMR memory bits;
- and
- a metal plug filled in the via and on the second dielectric layer to electrically connect two adjacent ends of the at least two GMR memory bits.
2 more elements
Dependencies are inferred from the claim text.