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US 7,396,694 B2Granted
Structure for monitoring semiconductor polysilicon gate profile
AssigneeInternational Business Machines Corporation
InventorsIshtiaq Ahsan, Edward P. Maciejewski
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Abstract
Detection of a profile drift of a polysilicon line is enhanced by a test structure that (1) measures a bottom width and an average width of a cross sectional area of the same polysilicon line (2) correlates the two measurements, and (3) compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line.
Claims5
A method for identifying a profile drift of a polysilicon line, comprising the steps of:
- (a) correlating a bottom width to an average width of a cross sectional area of an instant polysilicon line;
- (b) comparing said correlation with a predetermined correlation of bottom width to average width of cross sectional area of said polysilicon line;
- and,
- (c) identifying a profile drift whenever said instant correlation does not substantially equal said predetermined correlation.
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Dependencies are inferred from the claim text.