Signal routing on redistribution layer
AssigneeInfineon Technologies AG
InventorKlaus Hummler
Life of this patent
Estimating the term…
Abstract
A semiconductor wafer has a dielectric layer, a metal last layer, a passivation layer, and a redistribution layer. The metal last layer is formed over the dielectric layer, and the metal last layer has first and second locations that are spaced apart from each other. The passivation layer is formed over the metal last layer. The redistribution layer is formed over the passivation layer. The redistribution layer has a signal routing wire coupled to the first location of the metal last layer and to the second location of the metal last layer.
Claims15
A semiconductor wafer comprising:
- a dielectric layer;
- a metal last layer over the dielectric layer, the metal last layer having first and second locations spaced apart from each other;
- a passivation layer over the metal last layer;
- a redistribution layer over the passivation layer;
- and
- a signal routing wire within the redistribution layer, wherein the signal routing wire is coupled to both the first location and the second location of the metal last layer.
A semiconductor random access memory device comprising:
- a semiconductor wafer having a top surface with a center portion and an edge portion;
- a set of wafer bond pads on the top surface of the semiconductor wafer at the center portion;
- a redistribution layer on the top surface of the semiconductor wafer, wherein the redistribution layer has redistribution center pads coupled to the set of wafer bond pads, wherein the redistribution layer has redistribution edge pads coupled to the redistribution center pads, wherein the redistribution edge pads are located near the edge portion of the semiconductor wafer, and wherein a signal routing wire within the redistribution layer routes a signal from the semiconductor wafer up to the redistribution layer and back down to the semiconductor wafer.
A multi-layer semiconductor wafer comprising:
- a dielectric layer;
- a metal last layer over the dielectric layer, the metal last layer having first and second locations spaced apart from each other;
- a passivation layer over the metal last layer;
- a redistribution layer over the p passivation layer, the redistribution layer including bond pad;
- and
- means within the redistribution layer for routing a signal from the metal last layer up through the passivation layer to the redistribution layer, and for routing the signal back down through the passivation layer to the metal last layer.
A multilaver semiconductor wafer comprising:
- a dielectric layer;
- a metal last layer over the dielectric layer, the metal last layer having first and second locations spaced apart from each other;
- a passivation layer over the metal last layer;
- a redistribution layer over the passivation layer;
- and
- means within the redistribution layer for routing a signal from the metal last layer up through the passivation layer to the redistribution layer, and for routing the signal back down through the passivation layer to the metal last layer;
- wherein the redistribution layer has redistribution center pads coupled to the metal last layer, wherein the redistribution layer has redistribution edge pads coupled to the redistribution center pads and wherein the redistribution edge pads are located near and edge portion of the semiconductor wafer.
Dependencies are inferred from the claim text.