Multi-fault protected high side switch with current sense

An integrated semiconductor device for use in an electrical system between a power supply and a load such that current is delivered through the integrated semiconductor device to the load, the integrated semiconductor device comprising:

• a switch including:
• a lateral DMOS transistor having a source and a drain, wherein the drain is connected with a supply voltage;
• a high voltage extended drain PMOS transistor connected in series with the first transistor, wherein a source of the high voltage extended drain PMOS transistor is electrically connected with the source of the lateral DMOS transistor;
• and
• one or more control inputs used to receive control signals, wherein the control signals turn the lateral DMOS transistor and the high voltage extended drain PMOS transistor on and off thereby turning the switch on or off.

An integrated semiconductor device for use in an electrical system between a power supply and a load such that current is delivered through the integrated semiconductor device to the load, the integrated semiconductor device comprising:

• a switch including:
• a first transistor having a source and a drain, wherein the drain is connected with a supply voltage;
• a second transistor connected in series with the first transistor, wherein a source of the second transistor is electrically connected with the source of the first transistor;
• and
• one or more control inputs used to receive control signals, wherein the control signals turn the first transistor and the second transistor on and off thereby turning the switch on or off, and
• a third transistor that shorts the gate and the drain of the second transistor in the switch in a short to battery fault condition.

An integrated semiconductor device that provides protection from multiple fault conditions, the electrical device comprising:

• a switch having a first transistor connected in series with a second transistor, wherein a source of the first transistor is connected with a source of the second transistor, the switch comprising a first resistor having a first terminal coupled to a drain terminal of the first transistor and a supply voltage and having a second terminal coupled to a bulk terminal of the first transistor;
• and a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor;
• a current mirror that generates a current sense output and that mirrors a current delivered through the switch;
• and
• a feedback circuit connecting an output of the switch with an output of the current mirror such that an output voltage of the switch is equal to an output voltage of the current mirror.

A high side switch with multi-fault protection, the high side switch comprising:

• a first transistor and a second transistor in series, wherein a drain of the first transistor is connected with a supply voltage and a source of the first transistor is connected with a source of the second transistor, the switch comprising a first resistor having a first terminal coupled to a drain terminal of the first transistor and a supply voltage and having a second terminal coupled to a bulk terminal of the first transistor;
• and a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor;
• a first current mirror that mirrors current delivered through the first and second transistors by generating a first current that is a scaled version of the current delivered through the first transistor and the second transistor, wherein the first current provided as an output of the high side switch;
• a second current mirror that mirrors the current delivered through the first and second transistors by generating a second current that is a scaled version of the current delivered through the first transistor and the second transistor;
• an over current protection circuit that monitors the second current, wherein an over current signal is generated that shuts off the high side switch when the second current exceeds a threshold;
• a short to battery circuit that generates a short to battery signal that shuts off the high side switch when a voltage at the output of the second transistor exceeds the supply voltage;
• and
• an over voltage current that generates an over voltage signal that shuts off the high side switch when the supply voltage exceeds a threshold voltage.

An integrated semiconductor device for use in an electrical system between a power supply and a load such that current is delivered through the integrated semiconductor device to the load, the integrated semiconductor device comprising:

• a switch including:
• a first transistor having a source and a drain, wherein the drain is connected with a supply voltage;
• a second transistor connected in series with the first transistor, wherein a source of the second transistor is electrically connected with the source of the first transistor;
• and
• one or more control inputs used to receive control signals, wherein the control signals turn the first transistor and the second transistor on and off thereby turning the switch on or off;
• a first resistor having a first terminal coupled to the drain of the first transistor and the supply voltage and having a second terminal coupled to a bulk terminal of the first transistor;
• and
• a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor;
• and
• a current mirror that mirrors a current delivered through the switch.

An integrated semiconductor device that provides protection from multiple fault conditions, the electrical device comprising:

• a switch having a first transistor connected in series with a second transistor, wherein a source of the first transistor is connected with a source of the second transistor;
• a current mirror that generates a current sense output and that mirrors a current delivered through the switch;
• a feedback circuit connecting an output of the switch with an output of the current mirror such that an output voltage of the switch is equal to an output voltage of the current mirror;
• a first resistor having a first terminal coupled to the drain of the first transistor and having a second terminal coupled to a bulk terminal of the first transistor;
• and
• a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor.