Process for fabricating thin film transistors
AssigneeE Ink Corporation
InventorsKevin L Denis, Yu Chen, Paul S Drzaic, Joseph M Jacobson, Peter T Kazlas
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Abstract
Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.
Claims14
An electrophoretic display comprising, in order:
- a metal layer;
- a polyimide substrate;
- at least one transistor on the polyimide substrate;
- and
- an electrophoretic medium having a plurality of electrophoretic particles dispersed in a suspending fluid and capable of moving therethrough on application of an electric field to the medium.
An electrophoretic display comprising, in order:
- a metal layer;
- a polyimide substrate;
- at least one transistor on the polyimide substrate;
- and
- an electrophoretic medium having a plurality of electrophoretic particles dispersed in a suspending fluid and capable of moving therethrough on application of an electric field to the medium, wherein the polyimide is a polyphenylene polyimide.
An electrophoretic display comprising, in order:
- a metal layer;
- a polyimide substrate;
- at least one transistor on the polyimide substrate;
- and
- an electrophoretic medium having a plurality of electrophoretic particles dispersed in a suspending fluid and capable of moving therethrough on application of an electric field to the medium, the display further comprising a passivating layer between the polyimide substrate and the at least one transistor.
An electrophoretic display comprising, in order:
- a metal layer having walls defining apertures extending through the metal layer;
- a polyimide substrate;
- at least one transistor on the polyimide substrate;
- and
- an electrophoretic medium having a plurality of electrophoretic particles dispersed in a suspending fluid and capable of moving therethrough on application of an electric field to the medium.
An electrophoretic display comprising, in order:
- a metal layer;
- a polyimide substrate;
- at least one transistor on the polyimide substrate;
- and
- an electrophoretic medium having a plurality of electrophoretic particles dispersed in a suspending fluid and capable of moving therethrough on application of an electric field to the medium, wherein the transistor comprises at least one amorphous silicon layer.
Dependencies are inferred from the claim text.