US 7,353,493 B2Granted

Exposure mask, optical proximity correction device, optical proximity correction method, manufacturing method of semiconductor device, and optical proximity correction program

AssigneeSeiko Epson Corporation

InventorHisashi Akiyama

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Abstract

An optical proximity correction is provided that generates a corrected pattern P0 corresponding to a state M0 where the focus is in focus and the exposure dose is optimal, a corrected pattern P1 corresponding to a state M1 where the focus is in focus and the exposure dose is at the lower limit, a corrected pattern P2 corresponding to a state M2 where the focus is in focus and the exposure dose is at the upper limit, a corrected pattern P3 corresponding to a state M3 where the focus deviates to the lower side and the exposure dose is optimal, and a corrected pattern P4 corresponding to a state M4 where the focus deviates to the upper side and the exposure dose is optimal. By combining these corrected patterns P0 through P4, a composed pattern P5 is generated that reflects the scattering of the exposure dose and the deviation of the focus.

Claims10

Dependent claims

An optical proximity correction device, comprising:

a data input means for inputting data of a pattern to be processed;
a first corrected pattern generating means for generating a first corrected pattern by correcting the pattern to be processed based on a model adjusted with reference to measured data with proper focus and exposure dose;
a second corrected pattern generating means for generating a second corrected pattern by correcting the pattern to be processed based on a model adjusted with reference to measured data with at least one of focus and exposure dose deviating;
and
a composed pattern generating means for generating a composed pattern by combining the first corrected pattern and the second corrected pattern, the composed pattern generating means including:
a first dimensional deviation calculating means for calculating a dimensional deviation between the pattern to be processed and the first corrected pattern as for at least part of edges;
a second dimensional deviation calculating means for calculating a dimensional deviation between the pattern to be processed and the second corrected pattern as for at least part of edges;
and
a weighted average calculating means for calculating a weighted average of the dimensional deviations each calculated by the first dimensional deviation calculating means and the second dimensional deviation calculating means.

6 more elements

An optical proximity correction device, comprising:

a data input means for inputting data of a pattern to be processed;
a first corrected pattern generating means for generating a first corrected pattern by adding a hammerhead, a serif and a bias to each line-end region, corner region, and line-and-space region of the pattern to be processed, based on a model adjusted with reference to measured data with proper focus and exposure dose;
a second corrected pattern generating means for generating a second corrected pattern by adding a hammerhead, a serif and a bias to each line-end region, corner region, and line-and-space region of the pattern to be processed, based on a model adjusted with reference to measured data with at least one of focus and exposure dose deviating;
and
a composed pattern generating means for generating a composed pattern by combining the first corrected pattern and the second corrected pattern, the composed pattern generating means including:
a first dimensional deviation calculating means for calculating a dimensional deviation between the pattern to be processed and the first corrected pattern as for at least part of edges;
a second dimensional deviation calculating means for calculating a dimensional deviation between the pattern to be processed and the second corrected pattern as for at least part of edges;
and
a weighted average calculating means for calculating a weighted average of the dimensional deviations each calculated by the first dimensional deviation calculating means and the second dimensional deviation calculating means.

6 more elements

Dependencies are inferred from the claim text.