Method for correcting a mask pattern, a computer program product, a method for producing a photomask, and method for manufacturing a semiconductor device

A computer program product tangibly embodied in a computer readable storage medium and configured to execute instructions on a computer, the computer program product comprising:

• instructions configured to prepare a designed pattern;
• instructions configured to prepare first and second simulation models that simulate transferred images of an exposure apparatus, where a first simulation speed by using the first simulation model is faster than a second simulation speed using the second simulation model for a given mask pattern and exposure apparatus condition;
• instructions configured to create a first mask pattern by using data of the designed pattern:
• instructions configured to obtain a rough corrected mask pattern from a the first mask pattern, by applying a rough correction step including a first simulation step to obtain a first simulated pattern of the first mask pattern by using the first simulation model, and a first pattern modification step to modify the first mask pattern based on a first deviation amount between the designed pattern and the first simulated pattern, so as to obtain a first modified pattern, and repeating the application of the rough correction step until the first deviation amount is equal to or less than a predetermined rough criterion, wherein the first modified pattern in the rough correction step is used as the first mask pattern in a next rough correction step;
• and
• instructions configured to obtain a precision corrected mask pattern from the rough corrected mask pattern by applying a precision correction step including a second simulation step to obtain a second simulated pattern of a second mask pattern by using the second simulation model, wherein the rough corrected mask pattern is used as the second mask pattern, and a second pattern modification step to modify the second mask pattern based on a second deviation amount between the designed pattern and the second simulated pattern, so as to obtain a second modified pattern, and repeating the application of the precision correction step until the second deviation amount is equal to or less than a predetermined precision criterion, wherein the second modified pattern in the precision correction step is used as the second mask pattern in a next precision correction step;
• and instructions configured to output the precision corrected mask pattern.

A method for producing a photomask, comprising:

• preparing a designed pattern;
• preparing first and second simulation models that simulate transferred images of an exposure apparatus, where a first simulation speed using the first simulation model is faster than a second simulation speed using the second simulation model for a given mask pattern and exposure apparatus condition;
• creating a first mask pattern by using data of the designed pattern;
• obtaining a rough corrected mask pattern from the first mask pattern, by applying a rough correction step including a first simulation step to obtain a first simulated pattern of the first mask pattern by using the first simulation model, and a first pattern modification step to modify the first mask pattern based on a first deviation amount between the designed pattern and the first simulated pattern, so as to obtain a first modified pattern, and repeating the application of the rough correction step until the first deviation amount is equal to or less than a predetermined rough criterion, wherein the first modified pattern in the rough correction step is used as the first mask pattern in a next rough correction step;
• obtaining a precision corrected mask pattern from the rough corrected mask pattern by applying a precision correction step including a second simulation step to obtain a second simulated pattern of a second mask pattern by using the second simulation model, wherein the rough corrected mask pattern is used as the second mask pattern, and a second pattern modification step to modify the second mask pattern based on a second deviation amount between the designed pattern and the second simulated pattern, so as to obtain a second modified pattern, and repeating the application of the precision correction step until the second deviation amount is equal to or less than a predetermined precision criterion, wherein the second modified pattern in the precision correction step is used as the second mask pattern in a next precision correction step;
• loading a mask blank into a lithography system;
• and
• transferring the precision corrected mask pattern on the mask blank.

A method for manufacturing a semiconductor device, comprising:

• producing a photomask by
• preparing a designed pattern,
• preparing first and second simulation models that simulate transferred images of an exposure apparatus, where a first simulation speed using the first simulation model is faster than a second simulation speed using the second simulation model for a given mask pattern and an exposure apparatus condition,
• creating a first mask pattern by using data of the designed pattern,
• obtaining a rough corrected mask pattern from the first mask pattern by applying a rough correction using the first simulation model, and a first pattern modification step to modify the first mask pattern based on a first deviation amount between the designed pattern and the first simulated pattern, so as to obtain a first modified pattern, and repeating the application of the rough correction step until the first deviation amount is equal to or less than a predetermined rough criterion, wherein the first modified pattern in the rough correction step is used as the first mask pattern in a next rough correction step,
• obtaining a precision corrected mask pattern from the rough corrected mask pattern by applying a precision correction step including a second simulation step to obtain a second simulated pattern of a second mask pattern by using the second simulation model, wherein the rough corrected mask pattern is used as the second mask pattern, and a second pattern modification step to modify the second mask pattern based on a second deviation amount between the designed pattern and the second simulated pattern, so as to obtain a second modified pattern, and repeating the application of the precision correction step until the second deviation amount is equal to or less than a predetermined precision criterion, wherein the second modified pattern in the precision correction step is used as the second mask pattern in a next precision correction step,
• loading a mask blank into a lithography system, and
• transferring the precision corrected mask pattern on the mask blank;
• loading a semiconductor substrate coated with a resist film into the exposure apparatus;
• projecting light through the photomask on the resist film so as to transfer the precision corrected mask pattern of the photomask on the resist film to form a resist pattern;
• and
• forming a circuit pattern on the semiconductor substrate using the resist pattern as a mask, the circuit pattern corresponding to the precision corrected mask pattern.