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US 7,352,613 B2Granted
Magnetic memory device and methods for making a magnetic memory device
AssigneeMacronix International Co., Ltd.
InventorsChiaHua Ho, Kuang-Yeu Hsieh
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Abstract
A nonvolatile memory device is disclosed. The device includes a substrate, at least one relatively high permeability conductive line, and at least one magnetoresistive memory cell separated from the at least one relatively high permeability conductive line by an insulating material and located in a region of a magnetic field induced in the relatively high permeability conductive line. Methods of making such devices are also disclosed.
Claims28
A nonvolatile memory device, comprising:
- a substrate;
- a relatively high permeability conductive element on the substrate comprising a cross section comprising a polygon shape and comprises a material having a permeability (μ) ranging from about 10 to 108;
- and
- a magnetoresistive memory cell comprising a magnetic field, the magnetoresistive memory cell separated from the relatively high permeability conductive element by a non-magnetically conductive material and located in a region between neighboring two corners of the relatively high permeability conductive element, wherein the relatively high permeability conductive element is the only current line needed to change a direction of the magnetic field.
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A magnetoresistive memory device, comprising:
- a non-magnetically electrically conductive material;
- a relatively high permeability element comprising a cross section including a polygon shape and configured to directly generate a magnetic field in response to an applied current, wherein the leakage magnetic field from a position close to a corner of the relatively high permeability element has a strength that is the same order of magnitude as the strength of the magnetic field within the relatively high permeability element;
- and
- a magnetoresistive memory element comprising a magnetic field, the magnetoresistive element being adjacent to the relatively high permeability element, wherein the magnetoresistive memory element and the relatively high permeability element are separated by the non-magnetically electrically conductive material, and wherein the relatively high permeability element is the only current line needed to change a direction of the magnetic field.
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Dependencies are inferred from the claim text.