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AssigneeKoninklijke Philips Electronics N.V.
InventorsJohan Hendrik Klootwijk, Jan Willem Slotboom
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The invention relates to a radiation-emitting semiconductor device (10) with a semiconductor body (1) and a substrate (2), wherein the semiconductor body (1) comprises a vertical bipolar transistor with an emitter region (3), a base region (4) and a collector region (5), which regions are each provided with a connection region (6, 7, 8), and the border between the base region (4) and the collector region (5) forms a pn-junction and, in operation, at a reverse bias of the pn-junction or at a sufficiently large collector current, avalanche multiplication of charge carriers occurs whereby radiation is generated in the collector region (5). According to the invention, the collector region (5) has a thickness through which transmission of the generated radiation occurs, and the collector region (5) borders on a free surface of the semiconductor body (1).
A radiation-emitting semiconductor device comprising a semiconductor body and a substrate, which semiconductor body comprises a vertical bipolar transistor with an emitter region, a base region and a collector region, which regions are each provided with a connection region, and the boundary between the base region and the collector region forms a pn junction, and, during operation, at a reverse voltage across the pn junction, or at a sufficiently high collector current, avalanche multiplication of charge carriers occurs, causing radiation to be generated in the collector region, characterized in that the collector region has a thickness such that transmission of the generated radiation occurs, and the collector region borders on a free surface of the semiconductor body.
A method of manufacturing a radiation-emitting semiconductor device comprising:
Dependencies are inferred from the claim text.