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US 7,352,003 B2Granted
Electro-optical device having thin film transistor with LDD region
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHongyong Zhang
Life of this patent
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Abstract
An electro-optical device, such as a camera, includes a display unit having a thin film transistor including a source region, a drain region, a channel region formed between the source and drain regions, and a LDD region formed between the channel region and at least one of the source and drain regions. The LDD region may include first and second regions having different impurity concentrations. An impurity concentration may change continuously in the LDD region.
Claims14
A camera comprising:
- an eyepiece;
- operation switches;
- and
- a display unit,
- the display unit comprising:
- an N-channel thin film transistor over a substrate, the N-channel thin film transistor including a gate electrode, a source region, a drain region, a channel region formed between the source and drain regions, a first LDD region formed between the channel region and the source region, and a second LDD region formed between the channel region and the drain region;
- and
- a P-channel thin film transistor over the substrate, the P-channel thin film transistor including a gate electrode, a source region, a drain region, and a channel region formed between the source and drain regions, wherein:
- a length of the gate electrode of the N-channel thin film transistor is shorter than a distance between the first LDD region and the second LDD region,
- at least one of the first LDD region and the second LDD region includes first and second sub-regions and an impurity concentration of the first sub-region is different from an impurity concentration of the second sub-region, and
- the N-channel thin film transistor and the P-channel thin film transistor constitute a CMOS circuit.
8 more elements
A camera comprising:
- an eyepiece;
- operation switches;
- and
- a display unit,
- the display unit comprising:
- an N-channel thin film transistor over a substrate, the N-channel thin film transistor including a gate electrode, a source region, a drain region, a channel region formed between the source and drain regions, a first LDD region formed between the channel region and the source region, and a second LDD region formed between the channel region and the drain region;
- and
- a P-channel thin film transistor over the substrate, the P-channel thin film transistor including a gate electrode, a source region, a drain region, and a channel region formed between the source and drain regions, wherein:
- a length of the gate electrode of the N-channel thin film transistor is shorter than a distance between the first LDD region and the second LDD region;
- an impurity concentration changes continuously in at least one of the first LDD region and the second LDD region, and
- the N-channel thin film transistor and the P-channel thin film transistor constitute a CMOS circuit.
8 more elements
An electro-optical device comprising:
- a display unit, the display unit comprising:
- an N-channel thin film transistor over a substrate, the N-channel thin film transistor including a gate electrode, a source region, a drain region, a channel region formed between the source and drain regions, a first LDD region formed between the channel region and the source region, and a second LDD region formed between the channel region and the drain region;
- and
- a P-channel thin film transistor over the substrate, the P-channel thin film transistor including a gate electrode, a source region, a drain region, and a channel region formed between the source and drain regions, wherein:
- a length of the gate electrode of the N-channel thin film transistor is shorter than a distance between the first LDD region and the second LDD region;
- at least one of the first LDD region and the second LDD region includes first and second sub-regions and an impurity concentration of the first region is different from an impurity concentration of the second sub-region, and
- the N-channel thin film transistor and the P-channel thin film transistor constitute a CMOS circuit.
4 more elements
An electro-optical device comprising:
- a display unit, the display unit comprising:
- an N-channel thin film transistor over a substrate, the N-channel thin film transistor including a gate electrode, a source region, a drain region, a channel region formed between the source and drain regions, a first LDD region formed between the channel region and the source region, and a second LDD region formed between the channel region and the drain region;
- and
- a P-channel thin film transistor over the substrate, the P-channel thin film transistor including a gate electrode, a source region, a drain region, and a channel region formed between the source and drain regions, wherein:
- a length of the gate electrode of the N-channel thin film transistor is shorter than a distance between the first LDD region and the second LDD region;
- an impurity concentration changes continuously in at least one of the first LDD region and the second LDD region, and
- the N-channel thin film transistor and the P-channel thin film transistor constitute a CMOS circuit.
4 more elements
Dependencies are inferred from the claim text.