Etching solution for silicon oxide method of manufacturing a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Won Hwang, Hun-Jung Yi, Kwang-Shin Lim, Jung-Dae Park
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Abstract
An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.
Claims10
A method of manufacturing a semiconductor device, comprising:
- forming a first contact pad and a second contact pad on a substrate;
- forming a conductive structure including a metal suicide layer pattern electrically connected to the second contact pad;
- forming a silicon oxide layer including different silicon oxides on the substrate to cover the conductive structure, the silicon oxide layer including a first opening exposing the first contact pad;
- etching the silicon oxide layer using an etching solution for etching the different silicon oxides with an etching selectivity while preventing damage to the metal silicide layer pattern to form a second opening which is wider than the first opening;
- and
- forming a contact plug in the second opening, the contact plug having a lower portion which is wider than an upper portion,
- wherein the etching solution comprises about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and water.
A method of manufacturing a semiconductor device, comprising:
- forming a first contact pad and a second contact pad on a substrate;
- forming a conductive structure including a metal silicide layer pattern electrically connected to the second contact pad;
- forming first and second silicon oxide layers of respectively different first and second silicon oxide materials on the substrate to cover the conductive structure, the first and second silicon oxide layers including a first opening exposing the first contact pad, and the first silicon oxide layer interposed between the substrate and the second silicon oxide layer;
- etching the first and second silicon oxide layers using an etching solution which etches the first silicon oxide material at a greater etch rate than the second silicon oxide material, wherein the etching increases a width of the first opening to define a second opening, and wherein a width at a lower portion of the second opening adjacent the first oxide layer is greater than a width of an upper portion of the second opening adjacent the second oxide layer;
- and
- forming a contact plug in the second opening, the contact plug having a lower portion adjacent the first oxide layer which is wider than an upper portion adjacent the second oxide layer,
- wherein the etching solution comprises about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and water.
Dependencies are inferred from the claim text.