Semiconductor device having trench isolation layer and a method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Hwa Heo, Soo-Jin Hong
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Abstract
A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a buried layer, wherein the buried layer includes a first buried layer for filling a lower part of the trench isolation layer and a second buried layer for filling an upper part of the trench isolation layer. A semiconductor device preferably further includes a silicon oxide layer disposed between the semiconductor substrate and the silicon nitride liner. The silicon oxide layer includes a thermal oxide layer densified at a temperature over about 800° C.
Claims9
A method of forming a trench isolation layer of a semiconductor device, comprising the steps of:
- forming a trench-etching pattern for defining an active area on a substrate;
- forming an isolation trench on the substrate using the trench-etching pattern as an etching mask;
- forming a silicon nitride liner on inner walls of the trench;
- forming a silicon oxide liner on inner sides of the silicon nitride liner;
- performing heat treatment for hardening and densifying the silicon oxide liner;
- filling the trench having the silicon oxide liner by depositing a first buried layer of silicon oxide;
- partially etching the hardened and densified silicon oxide liner formed under the first buried layer of silicon oxide during recessing an upper surface of the first buried layer by etching;
- and
- filling a remaining portion of the trench by depositing a second buried layer of silicon oxide on the first buried layer whose upper surface has been partially recessed by the etching.
Dependencies are inferred from the claim text.