Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions

A method of forming a split-gate non-volatile memory cell comprising:

• forming first and second adjacent floating gates self-aligned to a field oxide region therebetween;
• forming an oxide layer covering the first and second adjacent floating gates and the field oxide region, the oxide layer electrically isolating the first and second adjacent floating gates from one another;
• and
• forming a control gate on the oxide layer on the first and second adjacent floating gates wherein forming first and second adjacent floating gates comprises forming a conductive layer on respective active regions in a substrate adjacent to the field oxide region and avoiding forming the conductive layer on the field oxide region, wherein the conductive layer comprises a first conductive layer, the method further comprising:
• forming a second conductive layer on the first conductive layer and on the field oxide region.