Method of trimming semiconductor elements with electrical resistance feedback
AssigneeSilicon Storage Technology, Inc.
InventorsBomy Chen, Ya-Fen Lin, Zhitang Song, Songlin Feng
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AssigneeSilicon Storage Technology, Inc.
InventorsBomy Chen, Ya-Fen Lin, Zhitang Song, Songlin Feng
Estimating the term…
A method of trimming down the volume of a semiconductor resistor element using electrical resistance feedback. After forming conductive material disposed between a pair of electrodes, a voltage is applied to the electrodes to produce an electrical current through the conductive material sufficient to heat and melt away a portion of the conductive material. By reducing the volume of the conductive material, its resistance is increased. The application of the voltage is ceased once the desired dimensions (and thus resistivity) of the conductive material is reached. The resulting semiconductor resistor element could have a fixed resistance, or could have a variable resistance (by using phase change memory material).
A method of trimming down a volume of conductive material disposed between a pair of electrodes, the method comprising:
Dependencies are inferred from the claim text.