Method for manufacturing semiconductor device
AssigneeSeiko Instruments Inc.
InventorsKazutoshi Ishii, Jun Osanai, Yuichiro Kitajima, Yukimasa Minami, Keisuke Uemura, Miwa Wake
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AssigneeSeiko Instruments Inc.
InventorsKazutoshi Ishii, Jun Osanai, Yuichiro Kitajima, Yukimasa Minami, Keisuke Uemura, Miwa Wake
Estimating the term…
In a manufacturing method for a semiconductor device, a main body wafer having an interlayer insulating film is formed, and a monitor wafer on which a monitor element is formed is provided. Characteristics of the main body wafer are copied onto the monitor element by simultaneously processing the main body wafer and the monitor wafer through BPSG densification during formation of the interlayer insulating film. The characteristic of the monitor element is measured by checking a process influence of the monitor element. Manufacturing conditions are set in accordance with the process influence of the monitor element. Variations in electric characteristics of the main body wafer are reduced in accordance with the set manufacturing conditions.
A manufacturing method for a semiconductor device, comprising the steps of:
A manufacturing method for a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.