Tri-gate transistors and methods to fabricate same
AssigneeIntel Corporation
InventorsRobert Chau, Suman Datta, Brian S Doyle, Been-Yih Jin
Life of this patent
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Abstract
Embodiments of the invention provide a method for effecting uniform silicon body height for silicon-on-insulator transistor fabrication. For one embodiment, a sacrificial oxide layer is disposed upon a semiconductor substrate. The oxide layer is etched to form a trench. The trench is then filled with a semiconductor material. The semiconductor material is then planarized with the remainder of the oxide layer and the remainder of the oxide layer is then removed. The semiconductor fins thus exposed are of uniform height to within a specified tolerance.
Claims20
A method comprising:
- disposing a trench layer upon a semiconductor substrate;
- forming one or more trenches in the trench layer exposing the semiconductor substrate;
- epitaxially growing a semiconductor material within the one or more trenches to fill the one or more trenches;
- and
- removing a portion of the trench layer to expose the semiconductor material as one or more semiconductor fins.
A method comprising:
- disposing a first oxide layer on a semiconductor substrate;
- disposing a nitride layer upon the first oxide layer;
- disposing a second oxide layer upon the nitride layer;
- selectively etching a portion of the second oxide layer, the nitride layer and the first oxide layer to define one or more trenches;
- epitaxially growing a semiconductor material within the one or more trenches to fill the one or more trenches;
- and
- selectively etching a remainder of the second oxide layer to form one or more semiconductor bodies from the semiconductor material.
A method comprising:
- forming a first film over a semiconductor substrate;
- forming a second film on said first film;
- forming a trench in said first film and said second film and exposing the semiconductor substrate;
- forming an epitaxial semiconductor film in said trench;
- and
- exposing a sidewall of said semiconductor film by removing said second film selectively from said first film.
Dependencies are inferred from the claim text.