Back to results
US 7,256,461 B2Granted
Electrostatic discharge (ESD) protection device
AssigneeWinbond Electronics Corp.
InventorsShi-Tron Lin, Wei-Fan Chen
Life of this patent
Estimating the term…
Abstract
The present invention provides a combinded FOX and poly gate structure, for effectively reducing the trigger voltage of a conventional field device, for improving the robustness of a NMOS transistor of a small drive I/O circuit, and for improving the ESD performance of a stack-gate voltage tolerant I/O.
Claims22
An electrostatic discharge (ESD) protection device, comprising:
- a semiconductor bulk of a first conductivity type;
- a first doped region of a second conductivity type formed in said semiconductor bulk;
- a second doped region of a second conductivity type formed in said semiconductor bulk;
- a channel region formed between said first doped region and said second region, and said channel region comprises a first part, a second part and a third part;
- wherein said first part and said third part are the different ends of said channel region, and said second part is located between said first part and said third part;
- a first gate segment formed only over a first part of said channel region;
- a first field-oxide stripe formed only over a second part of said channel region;
- and
- a first end of said first gate segment overlaps said first field-oxide stripe.
6 more elements
An electrostatic discharge (ESD) protection device, comprising:
- a semiconductor bulk of a first conductivity type;
- a first doped region of second conductivity type formed in said semiconductor bulk;
- a second doped region of a second conductivity type formed in said semiconductor bulk;
- a channel region formed between said first and said second doped regions and said channel region comprises a first part, a second part and a third part, wherein said first part and said third part are the different ends of said channel region, and said second part is located between said first part, and said third part,
- a first gate segment formed only over a first part of said channel region;
- a first field-oxide stripe formed only over a second part of said channel region;
- a first end of said first gate segment overlaps said first field-oxide stripe;
- a first and a second arrays of islands formed over said bulk and being encircled by said first doped region;
- wherein
- said first array of islands comprising polysilicon-over-oxide islands;
- said second array of islands comprising field-oxide islands;
- and
- said first array of islands being closer to said channel region than said second array of islands.
10 more elements
Dependencies are inferred from the claim text.