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US 7,256,438 B2Granted
MOS capacitor with reduced parasitic capacitance
AssigneeSaifun Semiconductors Ltd.
InventorsJoseph S. Shor, Eduardo Maayan, Yoram Betser
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Abstract
A capacitor including a first active layer capacitively coupled to a second active layer, the second active layer being capacitively coupled to a third layer, the third layer being capacitively coupled to a fourth layer, wherein an anode of the capacitor is connected to one of the first and second active layers, and a cathode of the capacitor is connected to the other one of the first and second active layers, and wherein the third layer is left floating. The fourth layer may be connected to a supply voltage, such as but not limited to, ground.
Claims3
A charge pump capacitor comprising:
- a first active layer capacitively coupled to a second active layer, said second active layer being capacitively coupled to a third layer, said third layer being capacitively coupled to a fourth layer, wherein an anode of the capacitor is connected to one of said first and second active layers, and a cathode of the capacitor is connected to the other one of said first and second active layers, and wherein the capacitor is connected to a charge pump stage, the anode of the capacitor is connected to a drain of a charge transfer transistor of said charge pump stage, the cathode of the capacitor is connected to a clock signal of said charge pump stage, and said third layer is connected to a voltage.
Dependencies are inferred from the claim text.