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US 7,256,432 B2Granted
Field-effect transistor
AssigneeNEC Corporation
InventorsYasuhiro Okamoto, Hironobu Miyamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Masaaki Kuzuhara
Life of this patent
Estimating the term…
Abstract
An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed below the electric-field control electrode (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered with the SiN film (21).
Claims20
A field-effect transistor comprising:
- a Group III nitride semiconductor layer structure which includes a heterojunction;
- a source electrode and a drain electrode which are formed on the semiconductor layer structure while being separated from each other;
- and
- a gate electrode which is arranged between said source electrode and said drain electrode,
- wherein, an electric-field control electrode is formed through an insulating film in an upper portion of said Group III nitride semiconductor layer structure, said electric-field control electrode being located in an area between said gate electrode and said drain electrode, and
- said insulating film is a multilayered film including a first insulating film and a second insulating film, said first insulating film containing silicon and nitrogen as constituent elements, said second insulating film having a dielectric constant lower than that of said first insulating film.
3 more elements
A field-effect transistor comprising:
- a Group III nitride semiconductor layer structure which includes a heterojunction;
- a source electrode and a drain electrode which are formed on the semiconductor layer structure while being separated from each other;
- and
- a gate electrode which is arranged between said source electrode and said drain electrode,
- wherein, an electric-field control electrode is formed through an insulating film in an upper portion of said Group III nitride semiconductor layer structure, said electric-field control electrode being located in an area between said gate electrode and said drain electrode, and
- said insulating film contains silicon and nitrogen as constituent elements.
3 more elements
A field-effect transistor comprising:
- a Group III nitride semiconductor layer structure which includes a heterojunction;
- a source electrode and a drain electrode which are formed on the semiconductor layer structure while being separated from each other;
- and
- a gate electrode which is arranged between said source electrode and said drain electrode,
- wherein, an electric-field control electrode is formed through an insulating film in an upper portion of said Group III nitride semiconductor layer structure, said electric-field control electrode being located in an area between said gate electrode and said drain electrode, and
- said insulating film is an insulating film which contains silicon, oxygen, and carbon as constituent elements.
3 more elements
A field-effect transistor comprising:
- a Group III nitride semiconductor layer structure which includes a heterojunction;
- a source electrode and a drain electrode which are formed on the semiconductor layer structure while being separated from each other;
- and
- a gate electrode which is arranged between said source electrode and said drain electrode,
- wherein, an electric-field control electrode is formed through an insulating film in an upper portion of said Group III nitride semiconductor layer structure, said electric-field control electrode being located in an area between said gate electrode and said drain electrode,
- said insulating film on said gate electrode side is formed by an insulating material which does not contain nitrogen as a constituent element, and
- said insulating film on said drain electrode side is formed by an insulating material which contains silicon and nitrogen as constituent elements.
4 more elements
A field-effect transistor comprising:
- a Group III nitride semiconductor layer structure which includes a heterojunction;
- a source electrode and a drain electrode which are formed on the semiconductor layer structure while being separated from each other;
- and
- a gate electrode which is arranged between said source electrode and said drain electrode,
- wherein, an electric-field control electrode is formed through an insulating film in an upper portion of said Group III nitride semiconductor layer structure, said electric-field control electrode being located in an area between said gate electrode and said drain electrode, and
- a dielectric constant of said insulating film is not more than 3.5.
3 more elements
Dependencies are inferred from the claim text.