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US 7,256,141 B1Granted
Interface layer between dual polycrystalline silicon layers
AssigneesAdvanced Micro Devices, Inc., Spansion LLC
InventorsMark T. Ramsbey, Weidong Qian, Mark Chang, Eric Paton
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Abstract
A structure interfaces dual polycrystalline silicon layers. The structure includes a first layer of polycrystalline silicon and a metal interface layer formed on a surface of the first layer of polycrystalline silicon. The structure further includes a second layer of polycrystalline silicon formed on a surface of the interface layer.
Claims11
A method, comprising:
- forming a first layer of polycrystalline silicon;
- cleaning a surface of the first layer;
- forming an interface layer over the surface of the first layer, wherein the interface layer comprises one of titanium, cobalt, or nickel;
- forming a second layer of polycrystalline silicon over the interface layer;
- and
- thermal cycling the first layer, interface layer and second layer to form at least one of titanium silicide, cobalt silicide or nickel silicide between at least a portion of the interface layer and portions of the first and second layers.
3 more elements
A method of forming an interface between dual polycrystalline silicon layers, comprising:
- forming a first layer of polycrystalline silicon;
- forming a metal interface layer on the first layer of polycrystalline silicon, wherein the metal interface layer comprises at least one of titanium (Ti), cobalt (Co) or nickel (Ni);
- and
- forming a second layer of polycrystalline silicon on the metal interface layer;
- and
- thermal cycling the first layer, metal interface layer and second layer to form at least one of titanium silicide (TiSi), cobalt silicide (CoSi) or nickel silicide (NiSi) between at least a portion of the metal interface layer and portions of the first and second layers.
3 more elements
A method, comprising:
- forming a first layer of polycrystalline silicon;
- forming a metal interface layer on the first layer of polycrystalline silicon;
- forming a second layer of polycrystalline silicon on the metal interface layer;
- and
- thermal cycling the first layer, metal interface layer and second layer to form a metal silicide between at least a portion of the metal interface layer and portions of the first and second layers.
2 more elements
Dependencies are inferred from the claim text.