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US 7,256,129 B2Granted
Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsKi-Won Nam, Jung-Taik Cheong
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Abstract
A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber.
Claims15
A method for fabricating a semiconductor device, comprising:
- forming an inter-layer insulation layer on a substrate;
- forming a hard mask layer on the inter-layer insulation layer;
- etching the hard mask layer using a contact mask;
- and
- etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening,
- wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber and etching of the inter-layer insulation layer is performed by utilizing C4F8 gas, H2F2 gas, oxygen (O2) gas, and argon (Ar) gas.
3 more elements
Dependencies are inferred from the claim text.