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US 7,256,128 B2Granted
Method of double-sided etching
AssigneeTouch Micro-System Technology Inc.
InventorChen-Hsiung Yang
Life of this patent
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Abstract
A wafer, having at least a spindle region and at least two through regions alongside the spindle region, is provided. The wafer in the spindle region is partially removed from the bottom surface. Thereafter, the bottom surface is bonded to a carrier with a bonding layer, and the wafer in the through regions is completely removed from the top surface.
Claims10
A method of double-sided etching, comprising:
- providing a wafer comprising at least a first region and at least a second region, an area of the first region being smaller than an area of the second region, and the second region being partially overlapped with the first region;
- performing a first etching process upon a first surface of the wafer to remove the wafer in the first region until a predetermined depth;
- bonding the first surface of the wafer to a carrier;
- and
- performing a second etching process upon a second surface of the wafer to remove a portion of the wafer in the second region not overlapped with the first region until the wafer is etched through.
2 more elements
A method of forming a micro spindle, comprising:
- providing a wafer comprising at least a spindle region and two through regions, the two through regions being respectively positioned on both sides of the spindle region;
- partially removing the wafer in the spindle region from a first surface of the wafer;
- and
- removing the wafer in the two through regions from a second surface of the wafer until the wafer is removed through to the first surface, wherein the first surface of the wafer is bonded to a carrier with a bonding layer while removing the wafer in the two through regions.
1 more element
Dependencies are inferred from the claim text.