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US 7,256,124 B2Granted
Method of fabricating semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKeng-Chu Lin, Yi-Chi Liao, Hung-Chun Tsai, Yung-Cheng Lu, Hung-Wen Su
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Abstract
A method of fabricating a semiconductor device. A semiconductor substrate with a patterned conductive layer on a top surface of the substrate is first provided. A dielectric layer is then formed to cover the substrate. Thereafter, an electron beam irradiation procedure is performed to anneal the patterned conductive layer and reduce resistance of the patterned conductive layer.
Claims12
A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate with a patterned conductive layer on a top surface of the semiconductor substrate;
- forming a cap layer over the patterned conductive layer;
- and
- performing an electron beam irradiation to anneal the patterned conductive layer, wherein the cap layer serves as a protective layer to prevent the patterned conductive layer from being damaged in the electron beam irradiation.
1 more element
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first dielectric layer on the substrate;
- patterning the first dielectric layer to form a first pattern in the first dielectric layer;
- forming a conductive layer on the first dielectric layer, the conductive layer filling the first pattern in the first dielectric layer;
- performing a planarization process to remove a part of the conductive layer over a top surface of the first dielectric layer;
- forming a cap layer on the first dielectric layer and the conductive layer;
- and
- performing an electron beam irradiation procedure to anneal the conductive layer, wherein the cap layer serves as a protective layer to prevent the conductive layer from being damaged by the electron beam irradiation.
5 more elements
Dependencies are inferred from the claim text.