Method of fabricating semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJung Joo Kim
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Abstract
The present invention provides a Cu line and method of forming the same, by which reliability (e.g., EM, BTS and the like) can be enhanced by replacing SiN by HfOx, which plays a role as a protective layer and/or an etch stop layer on a Cu line, prevents or inhibits galvanic corrosion due to Cu oxide, and inhibits or reduces additional formation of Cu oxide by gathering or scavenging oxygen atoms from —OH, O2, and H2O. The present method includes the steps of forming a trench in an insulating layer on a substrate, forming a planarized Cu layer in the trench, forming a HfOx layer on the planarized Cu layer, and thermally treating the substrate.
Claims20
A method of fabricating a semiconductor device, comprising the steps of:
- forming a trench pattern in an insulating layer on a substrate;
- forming a planarized Cu layer in the trench pattern;
- depositing a protective layer comprising HfO2 on the planarized Cu layer;
- depositing a barrier layer on the protective layer;
- and thermally treating the substrate.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a trench pattern in an insulating layer on a substrate;
- forming a planarized Cu layer in the trench pattern;
- depositing a protective layer comprising HfO2 on the planarized Cu layer, and
- annealing the substrate at a temperature of from about 200 to about 700° C.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a trench pattern in an insulating layer on a substrate;
- forming a planarized Cu layer in the trench pattern;
- depositing a protective layer comprising HfO2 on the planarized Cu layer by chemical vapor deposition;
- and
- thermally treating the substrate.
A device, comprising:
- an insulating layer on a substrate, the insulating layer having a trench therein;
- a planar Cu layer in the trench;
- a protective layer comprising HfO2 on the Cu layer;
- and
- a silicon nitride layer on the protective layer.
Dependencies are inferred from the claim text.