Method for changing threshold voltage of device in resist asher
AssigneeAtmel Corporation
InventorsChungdar Daniel Wang, William Markland
Life of this patent
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Abstract
A method for forming a dopant in a substrate, by accumulating at least one dopant species in an asher chamber and forming the accumulated dopant species on an exposed portion of the substrate. A target concentration for the plasma chamber dopant species is determined by test or measurement. The asher is used to form the dopant species on the substrate, and the dopant species is driven into the substrate. A threshold voltage is measured on the substrate to verify or confirm that a proper dopant level has been achieved.
Claims29
A method for forming a dopant in a substrate undergoing processing, the method comprising:
- transporting a dopant species onto an interior of an asher chamber by ashing dopant containing resist films from a plurality of processed substrates, using less forming gas when transporting said dopant species onto said interior of an asher chamber in comparison to a process designed to remove said dopant species from said asher chamber;
- forming said dopant species into exposed areas of a substrate undergoing processing;
- and
- driving said dopant species into said substrate undergoing processing.
A method for forming a dopant in a substrate undergoing processing, the method comprising:
- transporting a dopant species onto an interior of an asher chamber by ashing dopant containing resist films from a plurality of processed substrates, using a lower pressure when transporting said dopant species onto said interior of an asher chamber in comparison to a process designed to remove said dopant species from said asher chamber;
- forming said dopant species into exposed areas of a substrate undergoing processing;
- and
- driving said dopant species into said substrate undergoing processing.
A method for forming a dopant in a substrate undergoing processing, the method comprising:
- transporting a dopant species onto an interior of a plasma chamber by ashing dopant containing resist films from a plurality of processed substrates;
- forming a patterned oxide over a substrate undergoing processing;
- generating a plasma in said plasma chamber, said plasma being used to carry said dopant species to said exposed areas of said substrate undergoing processing;
- forming said dopant species within exposed areas of said substrate undergoing processing;
- and
- driving said dopant species into said substrate undergoing processing.
Dependencies are inferred from the claim text.