Method for removing a semiconductor layer
AssigneeFreescale Semiconductor, Inc.
InventorMarius K. Orlowski
Life of this patent
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Abstract
A method of forming a semiconductor device includes forming a first layer over a semiconductor substrate and forming a second layer over the first layer. The second layer includes silicon and has an etch selectivity to the second layer that is greater than approximately 1,000. In one embodiment, the second layer is a porous material, such as porous silicon, porous silicon germanium, porous silicon carbide, and porous silicon carbon alloy. A gate insulator is formed over the second layer and a control electrode is formed over the gate insulator. The first layer is selectively removed with respect to the second layer and the semiconductor substrate.
Claims19
A method of forming a semiconductor device comprising:
- providing a semiconductor substrate;
- forming a first layer over the semiconductor substrate, wherein the first layer comprises a porous material, wherein the porous material comprises silicon;
- forming a second layer over the first layer, wherein the second layer comprises silicon;
- forming a gate insulator over the second layer;
- forming a control electrode over the gate insulator;
- and
- selectively removing substantially all of the first layer with respect to the second layer and the semiconductor substrate.
A method of forming a semiconductor device comprising:
- providing a semiconductor substrate;
- forming a first layer over the semiconductor substrate;
- forming a second layer over the first layer, wherein the second layer comprises silicon wherein the first layer has an etch selectivity to the second layer that is greater than approximately 1,000;
- forming a gate insulator over the second layer;
- forming a control electrode over the gate insulator;
- and
- selectively removing substantially all of the first layer with respect to the second layer and the semiconductor substrate.
Dependencies are inferred from the claim text.