Alignment method of exposure mask and manufacturing method of thin film element substrate
AssigneeSeiko Epson Corporation
InventorChiharu Iriguchi
Life of this patent
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Abstract
A method for aligning an exposure mask comprises: using a plurality of hologram masks, on which an alignment mark is formed; aligning position of the hologram masks toward an object to be exposed and on which an alignment mark is also formed, with a plurality of times by using both alignment marks; and pattern-exposing the object, wherein, while aligning at least three consecutive times, an alignment mark for third time aligning on the object is set in between alignment marks respectively for second time aligning and first time aligning, or at a position on an opposite side to a side in which the alignment mark for second time aligning is located with respect to the alignment mark for first time aligning.
Claims8
A method for aligning an exposure mask comprising:
- performing a first exposure to a substrate by using a first hologram mask to which a first pattern is formed;
- performing a first alignment between the substrate and a second hologram mask by using a first alignment mark included in the first pattern formed on the substrate by the first exposure and a second alignment mark included in a second pattern that is formed on the second hologram mask and that includes a third alignment mark;
- performing a second exposure to the substrate by using the second hologram mask;
- performing a second alignment between the substrate and a third hologram mask by using the third alignment mark included in the second pattern formed on the substrate by the second exposure and a fourth alignment mark included in a third pattern that is formed on the third hologram mask and that includes a fifth alignment mark;
- and
- performing a third exposure to the substrate by using the third hologram mask,
- a distance between the second alignment mark included in the second pattern formed on the substrate by the second exposure and the third alignment mark included in the second pattern formed on the substrate by the second exposure being larger than a predetermined value,
- a distance between the fourth alignment mark included in the third pattern formed on the substrate by the third exposure and the fifth alignment mark included in the third pattern formed on the substrate by the third exposure being larger than the predetermined value, and
- a distance between the first alignment mark included in the first pattern formed on the substrate by the first exposure and the fifth alignment mark included in the third pattern formed on the substrate by the third exposure being smaller than the predetermined value.
Dependencies are inferred from the claim text.