Bipolar transistor with geometry optimized for device performance, and method of making same
AssigneeLegerity, Inc.
InventorRanadeep Dutta
Life of this patent
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Abstract
The present invention is generally directed to bipolar transistors with geometry optimized for device performance and various methods of making same. In one illustrative embodiment, the device includes a substrate, an intrinsic base region formed in the substrate, a continuous emitter region formed within the intrinsic base region, the emitter region having a plurality of substantially hexagonal shaped openings defined therein, and a plurality of extrinsic base regions formed in the substrate, wherein each of the extrinsic base regions is positioned within an area defined by one of the plurality of substantially hexagonal shaped openings.
Claims23
A bipolar junction transistor, comprising:
- a substrate;
- an intrinsic base region formed in said substrate;
- a continuous emitter region formed within said intrinsic base region, said emitter region having a plurality of substantially hexagonal shaped openings defined therein;
- and
- a plurality of extrinsic base regions formed in said substrate, wherein each of said extrinsic base regions is positioned within an area defined by one of said plurality of substantially hexagonal shaped openings.
A bipolar junction transistor, comprising:
- a substrate;
- an intrinsic base region formed in said substrate;
- a continuous emitter region formed within said intrinsic base region, said emitter region having a plurality of substantially hexagonal shaped openings defined therein;
- a plurality of substantially hexagonal shaped extrinsic base regions formed in said substrate, wherein each of said substantially hexagonal shaped extrinsic base regions is positioned within an area defined by one of said plurality of substantially hexagonal shaped openings;
- and
- at least one conductive contact coupled to said continuous emitter region.
A bipolar junction transistor, comprising:
- a substrate;
- an intrinsic base region formed in said substrate;
- a continuous emitter region formed within said intrinsic base region, said emitter region having a plurality of substantially hexagonal shaped openings defined therein, said continuous emitter region having an approximately constant width between each of said plurality of substantially hexagonal shaped openings;
- and
- a plurality of substantially hexagonal shaped extrinsic base regions formed in said substrate, wherein each of said substantially hexagonal shaped extrinsic base regions is positioned within an area defined by one of said plurality of substantially hexagonal shaped openings.
Dependencies are inferred from the claim text.