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US 7,253,484 B2Granted
Low-power multiple-channel fully depleted quantum well CMOSFETs
AssigneeAdvanced Micro Devices, Inc.
InventorsJames N. Pan, John G. Pellerin, Jon Cheek
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Abstract
A multiple-channel semiconductor device has fully or partially depleted quantum wells and is especially useful in ultra large scale integration devices, such as CMOSFETs. Multiple channel regions are provided on a substrate with a gate electrode formed on the uppermost channel region, separated by a gate oxide, for example. The vertical stacking of multiple channels and the gate electrode permit increased drive current in a semiconductor device without increasing the silicon area occupied by the device.
Claims12
A multiple-channel semiconductor device, comprising:
- a substrate;
- source and drain extensions formed in said substrate;
- a stack of layers overlying said substrate in the following sequence:
- a first insulator layer on the substrate, wherein the source and drain extensions are formed below the first insulator layer;
- a first channel region on the first insulator layer;
- a second insulator layer on the first channel region;
- a second channel region on the second insulator layer;
- a third insulator layer on the second channel region;
- and
- a gate electrode on the third insulator layer.
7 more elements
Dependencies are inferred from the claim text.