Diode structure and integral power switching arrangement

A diode structure comprising:

• a first semiconductor region, formed in a semiconductor substrate, with a basic doping of a first conductivity type, a second semiconductor region, which adjoins the first semiconductor region, of a second conductivity type which is the opposite of the first conductivity type, a pn-junction, which determines the functionality of the diode structure, between the first and the second semiconductor region, and a third semiconductor region, which adjoins the second semiconductor region, of the first conductivity type;
• at least one first inner contact region, which is formed within the first semiconductor region and adjoins a substrate surface of the semiconductor substrate, with a contact doping of the first conductivity type which is higher than the basic doping, a base substrate of the second conductivity type which adjoins the third semiconductor region;
• and
• a first connection which is connected to the first semiconductor region in the region of the inner contact region, a second connection which is connected to the second semiconductor region, one of the connections being operated as a cathode connection and the other connection being operated as an anode connection, and the third semiconductor region being connected to the second connection, characterized by at least one second inner contact region of the second conductivity type which is formed within the first semiconductor region and is connected to the first connection,
• wherein the second inner contact region adjoins a substrate surface of the semiconductor substrate, and wherein the first semiconductor region is in the form of at least one inner well which is enclosed in the semiconductor substrate by the second semiconductor region.

A power switching arrangement comprising:

• at least one transistor structure which is formed within a first well structure, which is supported by a base substrate of a second conductivity type, of a first conductivity type which is the opposite of the second conductivity type, a diode structure which is formed within a second well structure of the first conductivity type which is provided on the base substrate, and isolating structures of the second conductivity type which isolate the first and second well structures from one another and are vertical to the base substrate, wherein the diode structure formed in the second well structure comprises:
• a first semiconductor region, formed in a semiconductor substrate, with a basic doping of a first conductivity type, a second semiconductor region, which adjoins the first semiconductor region, of a second conductivity type which is the opposite of the first conductivity type, a pn-junction, which determines the functionality of the diode structure, between the first and the second semiconductor region, and a third semiconductor region, which adjoins the second semiconductor region, of the first conductivity type;
• at least one first inner contact region, which is formed within the first semiconductor region and adjoins a substrate surface of the semiconductor substrate, with a contact doping of the first conductivity type which is higher than the basic doping, a base substrate of the second conductivity type which adjoins the third semiconductor region;
• and
• a first connection which is connected to the first semiconductor region in the region of the inner contact region, a second connection which is connected to the second semiconductor region, one of the connections being operated as a cathode connection and the other connection being operated as an anode connection, and the third semiconductor region being connected to the second connection, characterized by at least one second inner contact region of the second conductivity type which is formed within the first semiconductor region and is connected to the first connection,
• and wherein the second well structure is formed by the outer well of the diode structure.

A diode comprising:

• a first semiconductor region with a basic doping of a first conductivity type, a second semiconductor region, of a second conductivity type which is the opposite of the first conductivity type, a pn-junction, which determines the functionality of the diode structure, between the first and the second semiconductor region, and a third semiconductor region of the first conductivity type;
• at least one first inner contact region, which is formed within the first semiconductor region and adjoins a substrate surface of the semiconductor substrate, with a contact doping of the first conductivity type which is higher than the basic doping, a base substrate of the second conductivity type which adjoins the third semiconductor region;
• a first connection which is connected to the first semiconductor region in the region of the inner contact region;
• and
• at least one second inner contact region of the second conductivity type which is formed within the first semiconductor region and is connected to the first connection.

A diode comprising:

• a first semiconductor region with a basic doping of a first conductivity type, a second semiconductor region, of a second conductivity type which is the opposite of the first conductivity type, a pn-junction, which determines the functionality of the diode structure, between the first and the second semiconductor region, and a third semiconductor region of the first conductivity type;
• contact means, formed within the first semiconductor region and adjoins a substrate surface of the semiconductor substrate, with a contact doping of the first conductivity type which is higher than the basic doping, a base substrate of the second conductivity type which adjoins the third semiconductor region;
• a first connection which is connected to the first semiconductor region in the region of the inner contact region;
• and
• at least one second inner contact region of the second conductivity type which is formed within the first semiconductor region and is connected to the first connection.