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US 7,253,069 B2Granted
Method for manufacturing silicon-on-insulator wafer
AssigneeSumitomo Mitsubishi Silicon Corporation
InventorsYoshio Murakami, Toru Yamazaki, Yoshiro Aoki, Akihiko Endo
Life of this patent
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Abstract
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250° C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.
Claims12
A method for manufacturing a SOI wafer, comprising:
- a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order;
- and
- a step of unloading the SOI wafer from the furnace maintained at a temperature of 250°°C. to 800° C. to transfer the SOI wafer to an atmosphere containing hydrogen or water, the steps being performed in that order.
Dependencies are inferred from the claim text.